IRLML6401 datasheet(2/4 Pages) HOTTECH

2 / 4 page

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

––– –––

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

––– –––

p-n junction diode.

VSD

Diode Forward Voltage

––– ––– -1.2

TJ = 25°C, IS = -1.3A, VGS = 0V

trr

Reverse Recovery Time

–––

TJ = 25°C, IF = -1.3A

Qrr

Reverse RecoveryCharge

–––

8.0

di/dt = -100A/µs

Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

-1.3

-34

Surface mounted on 1" square single layer 1oz. copper FR4 board,

steady state.

Starting TJ = 25°C, L = 3.5mH

RG = 25Ω, IAS = -4.3A.

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1

100

-VDS, Drain-to-Source Voltage (V)

0.01

0.1

100

-1.0V

20µs PULSE WIDTH

Tj = 150°C

VGS

TOP

-7.0V

-5.0V

-4.5V

-3.0V

-2.5V

-1.8V

-1.5V

BOTTOM -1.0V

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-VGS, Gate-to-Source Voltage (V)

0.1

1.0

10.0

100.0

TJ = 25°C

TJ = 150°C

VDS = -12V

20µs PULSE WIDTH

-60 -40 -20 0

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

I =

-4.5V

-4.3A

0.1

100

-VDS, Drain-to-Source Voltage (V)

0.01

0.1

100

-1.0V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP

-7.0V

-5.0V

-4.5V

-3.0V

-2.5V

- 1.8V

-1.5V

BOTTOM -1.0V

Page:P4 -P2

Plastic-Encapsulate Mosfets

GUANGDONG

HOTTECH

INDUSTRIAL

CO., LTD.

IRLML6401

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