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SSF2816EB bảng dữ liệu(PDF) 2 Page - GOOD-ARK Electronics

tên linh kiện SSF2816EB
Giải thích chi tiết về linh kiện  20V Dual N-Channel MOSFET
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nhà sản xuất  GOOD-ARK [GOOD-ARK Electronics]
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SSF2816EB bảng dữ liệu(HTML) 2 Page - GOOD-ARK Electronics

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Rev.1.1
SSF2816EB
20V Dual N-Channel MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
VGS=±4.5V,VDS=0V
±200
nA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
±10
uA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.6
0.75
1.2
V
VGS=4.5V, ID=6.5A
16.5
22
mΩ
VGS=4V, ID=6A
17
23
mΩ
VGS=3.1V, ID=5.5A
19
26
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=2.5V, ID=5.5A
22
30
mΩ
Forward Transconductance
gFS
VDS=10V,ID=6.5A
6.6
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
600
PF
Output Capacitance
Coss
330
PF
Reverse Transfer Capacitance
Crss
VDS=8V,VGS=0V,
F=1.0MHz
140
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
10
20
nS
Turn-on Rise Time
tr
11
25
nS
Turn-Off Delay Time
td(off)
35
70
nS
Turn-Off Fall Time
tf
VDD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
30
60
nS
Total Gate Charge
Qg
10
15
nC
Gate-Source Charge
Qgs
2.3
nC
Gate-Drain Charge
Qgd
VDS=10V,ID=7A,
VGS=4.5V
3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.5A
0.84
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.



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