2N7002KB datasheet(2/6 Pages) GOOD-ARK

2 / 6 page

2N7002KB

60V N-Channel MOSFET

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Page 2 of 6

Rev.1.0

Electrical Characteristics @TA=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

—

VGS = 0V, ID = 250μA

—

1.5

VGS=10V, ID=0.5A

RDS(on)

Static Drain-to-Source on-resistance

—

VGS=5V, ID=0.05A

VGS(th)

Gate threshold voltage

—

2.5

VDS = VGS, ID = 250μA

IDSS

Drain-to-Source leakage current

—

μA

VDS = 60V,VGS = 0V

—

±100

VGS=±5V,VDS=0V

IGSS

Gate-to-Source forward leakage

—

±10

VGS=±20V,VDS=0V

td(on)

Turn-on delay time

—

td(off)

Turn-Off delay time

—

VGS=10V, VDS=30V,

ID=0.2A,RGEN=10Ω

Ciss

Input capacitance

—

Coss

Output capacitance

—

16.6

—

Crss

Reverse transfer capacitance

—

9.5

—

VGS = 0V

VDS = 25V

ƒ = 1MHz

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

0.3

ISM

Pulsed Source Current

(Body Diode)

—

1.2

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

Diode Forward Voltage

—

1.3

IS=0.2A, VGS=0V

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