MSN6510F datasheet(1/5 Pages) MORESEMI

tên linh kiện	MSN6510F

Giải thích chi tiết về linh kiện	650V(D-S) N-Channel Enhancement Mode Power MOS FET

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General Features

● VDS =650V,ID =10A

RDS(ON) <0.95 Ω @ VGS=10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

TO-220F-3L

-

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

650

V

Gate-Source Voltage

VGS

±30

V

Drain Current-Continuous

ID

10

A

Drain Current-Continuous(TC=100℃)

ID (100℃)

6

A

Pulsed Drain Current

IDM

40

A

Maximum Power Dissipation

PD

W

Derating factor

0.4

W/℃

Single pulse avalanche energy

(Note 5)

EAS

700

mJ

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 155

℃

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MSN6510F

650V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN6510F

Lead Free

PIN Configuration

60

Schematic diagram

Marking and pin assignment

TO-220F top view

Số phần tương tự - MSN6510F

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