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GD25Q32C bảng dữ liệu(PDF) 34 Page - ELM Electronics |
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GD25Q32C bảng dữ liệu(HTML) 34 Page - ELM Electronics |
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34 / 50 page ![]() 34 Rev.1.0 50 - http://www.elm-tech.com GD25Q32CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash Figure 31. Read Identification ID Sequence Diagram 7.27. High Performance Mode (HPM) (A3H) The High Performance Mode (HPM) command must be executed prior to Dual or Quad I/O commands when operating at high frequencies (see fR and fC1 in AC Electrical Characteristics). This command allows pre- charging of internal charge pumps so the voltages required for accessing the flash memory array are readily available. The command sequence: CS# goes low → Sending A3H command → Sending 3-dummy byte → CS# goes high. See Figure32. After the HPM command is executed, the device will maintain a slightly higher standby current (Icc8) than standard SPI operation. The Release from Power-Down or HPM command (ABH) can be used to return to standard SPI standby current (Icc1). In addition, Power-Down command (B9H) will also release the device from HPM mode back to standard SPI standby state. Figure 32. High Performance Mode Sequence Diagram Command 0 1 2 3 4 5 6 7 A3H CS# SCLK SI 8 9 29 30 31 MSB 2 1 0 3 Dummy Bytes 23 22 SO High Performance Mode HPM t 7.28. Program/Erase Suspend (PES) (75H) The Program/Erase Suspend command “75H”, allows the system to interrupt a page program or sector/ block erase operation and then read data from any other sector or block. The Write Status Register command (01H/31H/11H) and Erase/Program Security Registers command (44H, 42H) and Erase commands (20H, 52H, D8H, C7H, 60H) and Page Program command (02H/32H) are not allowed during Program/Erase suspend. Program/Erase Suspend is valid only during the page program or sector/block erase operation. A maximum of |
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