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DS90CP22 bảng dữ liệu(PDF) 2 Page - National Semiconductor (TI) |
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DS90CP22 bảng dữ liệu(HTML) 2 Page - National Semiconductor (TI) |
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2 / 10 page ![]() Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (V CC) −0.3V to +4V CMOS/TTL Input Voltage (EN0, EN1, SEL0, SEL1) −0.3V to (V CC + 0.3V) LVDS Receiver Input Voltage (IN+, IN−) −0.3V to +4V LVDS Driver Output Voltage (OUT+, OUT−) −0.3V to +4V LVDS Output Short Circuit Current Continuous Junction Temperature +150˚C Storage Temperature Range −65˚C to +150˚C Lead Temperature (Soldering, 4 sec.) +260˚C Maximum Package Power Dissipation at 25˚C 16L SOIC 1.435 W 16L SOIC Package Derating 11.48 mW/˚C above +25˚C 16L TSSOP 0.866 W 16L TSSOP Package Derating 9.6 mW/˚C above +25˚C ESD Rating: (HBM, 1.5k Ω, 100pF) > 5kV (EIAJ, 0 Ω, 200pF) > 250 V Recommended Operating Conditions Min Typ Max Units Supply Voltage (V CC) 3.0 3.3 3.6 V Receiver Input Voltage 0 V CC V Operating Free Air Temperature -40 +25 +85 ˚C Electrical Characteristics Over recommended operating supply and temperature ranges unless otherwise specified Symbol Parameter Conditions Min Typ Max Units CMOS/TTL DC SPECIFICATIONS (EN0,EN1,SEL0,SEL1) V IH High Level Input Voltage 2.0 V CC V V IL Low Level Input Voltage GND 0.8 V I IH High Level Input Current V IN = 3.6V or 2.0V; VCC = 3.6V +7 +20 µA I IL Low Level Input Current V IN = 0V or 0.8V; VCC = 3.6V ±1 ±10 µA V CL Input Clamp Voltage I CL = −18 mA −0.8 −1.5 V LVDS OUTPUT DC SPECIFICATIONS (OUT0,OUT1) V OD Differential Output Voltage R L =75 Ω 270 365 475 mV R L =75 Ω,V CC = 3.3V, TA = 25˚C 285 365 440 mV ∆V OD Change in V OD between Complimentary Output States 35 mV V OS Offset Voltage (Note 3) 1.0 1.2 1.45 V ∆V OS Change in V OS between Complimentary Output States 35 mV I OZ Output TRI-STATE® Current TRI-STATE Output, ±1 ±10 µA V OUT =VCC or GND I OFF Power-Off Leakage Current V CC = 0V; VOUT = 3.6V or GND ±1 ±10 µA I OS Output Short Circuit Current V OUT+ OR VOUT− = 0V −15 −25 mA I OSB Both Outputs Short Circuit Current V OUT+ AND VOUT− = 0V −30 −50 mA LVDS RECEIVER DC SPECIFICATIONS (IN0,IN1) V TH Differential Input High Threshold V CM = +0.05V or +1.2V or +3.25V, 0 +100 mV V TL Differential Input Low Threshold Vcc = 3.3V −100 0 mV V CMR Common Mode Voltage Range V ID = 100mV, Vcc = 3.3V 0.05 3.25 V I IN Input Current V IN = +3.0V, VCC = 3.6V or 0V ±1 ±10 µA V IN = 0V, VCC = 3.6V or 0V ±1 ±10 µA SUPPLY CURRENT I CCD Total Supply Current R L =75 Ω,C L = 5 pF, EN0 = EN1 = High 98 125 mA I CCZ TRI-STATE Supply Current EN0 = EN1 = Low 43 55 mA Note 1: “Absolute Maximum Ratings” are these beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation. Note 2: All typical are given for VCC = +3.3V and TA = +25˚C, unless otherwise stated. Note 3: VOS is defined and measured on the ATE as (VOH +VOL)/2. www.national.com 2 |
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