DMN2004DWKQ

Document number: DS38630 Rev. 1 - 2

2 of 6

www.diodes.com

February 2016

© Diodes Incorporated

DMN2004DWKQ

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±8

V

Drain Current (Note 6)

Steady

State

540

390

mA

Pulsed Drain Current (Note 7)

1.5

A

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

200

mW

Thermal Resistance, Junction to Ambient

625

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

20

-

-

V

Zero Gate Voltage Drain Current

-

-

1

µA

Gate-Source Leakage

-

-

1

µA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

0.5

-

1.0

V

Static Drain-Source On-Resistance

-

0.4

0.5

0.7

0.55

0.70

0.9

Ω

Forward Transfer Admittance

200

-

-

mS

Diode Forward Voltage (Note 8)

0.5

-

1.4

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-

36

150

pF

f = 1.0MHz

Output Capacitance

-

5.7

25

pF

Reverse Transfer Capacitance

-

4.2

20

pF

-

0.53

-

nC

-

0.95

-

Gate-Source Charge

-

0.08

-

Gate-Drain Charge

-

0.07

-

Turn-On Delay Time

-

4.1

-

ns

Turn-On Rise Time

-

7.3

-

ns

Turn-Off Delay Time

-

13.8

-

ns

Turn-Off Fall Time

-

10.5

-

ns

Notes:

6. Device mounted on FR-4 PCB.

7. Pulse width

10µS, Duty Cycle 1%.

8. Short duration pulse test used to minimize self-heating effect.