AL5802LPL

Document number: DS38590 Rev. 3 - 2

4 of 11

www.diodes.com

April 2016

© Diodes Incorporated

AL5802LPL

Electrical Characteristics

Symbol

Characteristic

Test Condition

Min

Typ

Max

Unit

Collector-Emitter Breakdown Voltage (Notes 8 & 9)

40

—

—

V

Emitter-Base Breakdown Voltage

6.0

—

—

V

Collector Cutoff Current (Note 9)

—

—

50

nA

Base Cutoff Current (Note 9)

—

—

50

nA

DC Current Gain

70

100

—

—

—

300

—

Collector-Emitter Saturation Voltage (Note 8)

—

—

0.20

V

Base-Emitter Saturation Voltage

0.65

—

0.85

V

Base-Emitter Turn-On Voltage

0.30

—

1.10

V

Electrical Characteristics

Symbol

Characteristic

Test Condition

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

30

—

—

V

Collector-Emitter Breakdown Voltage (Note 8)

30

—

—

V

Emitter-Base Breakdown Voltage (Note 9)

5.0

—

—

V

Collector Cutoff Current

—

—

0.5

µA

Emitter Cutoff Current (Note 9)

—

—

0.5

µA

Collector-Emitter Saturation Voltage (Note 8)

—

—

0.3

V

Base-Emitter Turn-On Voltage

0.30

—

1.10

V

DC Current Gain (Note 8)

100

—

—

—

Input Resistance

—

7

10

13

kΩ

Notes:

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished goods level due to

the testability of the device changed after packaging multiple dies to form an application circuit.