K4S641633H - R(B)E/N/G/C/L/F

February 2004

Mobile-SDRAM

• 3.0V & 3.3V power supply.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25

°C ~ 70°C).

• Extended Temperature Operation (-25

°C ~ 85°C).

• 54Balls FBGA with 0.8mm ball pitch

( -RXXX : Leaded, -BXXX : Lead Free).

FEATURES

The K4S641633H is 67,108,864 bits synchronous high data

rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

GENERAL DESCRIPTION

ORDERING INFORMATION

- R(B)E/N/G : Normal / Low / Low Power, Extended Temperature(-25

°C ~ 85°C)

- R(B)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25

°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific

purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

Part No.

Max Freq.

Interface

Package

K4S641633H-R(B)E/N/G/C/L/F75

133MHz(CL=3)

LVCMOS

54 FBGA

Leaded (Lead Free)

K4S641633H-R(B)E/N/G/C/L/F1H

105MHz(CL=2)

K4S641633H-R(B)E/N/G/C/L/F1L

1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA