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DS90C031BTM bảng dữ liệu(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
tên linh kiện DS90C031BTM
Giải thích chi tiết về linh kiện  LVDS Quad CMOS Differential Line Driver
PDF  12 Pages
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nhà sản xuất  NSC [National Semiconductor (TI)]
Trang chủ  http://www.national.com
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DS90C031BTM bảng dữ liệu(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.3V to +6V
Input Voltage (D
IN)
−0.3V to (V
CC + 0.3V)
Enable Input Voltage (EN, EN*)
−0.3V to (V
CC + 0.3V)
Output Voltage (D
OUT+,DOUT−)
−0.3V to +5.8V
Short Circuit Duration
(D
OUT+,DOUT−)
Continuous
Maximum Package Power Dissipation @ +25˚C
M Package
1068 mW
WM Package
1562 mW
Derate M Package
8.5 mW/˚C above +25˚C
Derate WM Package
12.5 mW/˚C above +25˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature Range
Soldering (4 sec.)
+260˚C
Maximum Junction
Temperature
+150˚C
ESD Rating (Note 7)
(HBM, 1.5 k
Ω, 100 pF)
≥ 2kV
(EIAJ, 0
Ω, 200 pF)
≥ 250V
Recommended Operating
Conditions
Min
Typ
Max
Units
Supply Voltage (V
CC)
+4.5
+5.0
+5.5
V
Operating Free Air Temperature (T
A)
DS90C031BT
−40
+25
+85
˚C
Electrical Characteristics
Over supply voltage and operating temperature ranges, unless otherwise specified. (Notes 2, 3)
Symbol
Parameter
Conditions
Pin
Min
Typ
Max
Units
V
OD1
Differential Output Voltage
R
L = 100Ω (Figure 1)DOUT−,
D
OUT+
250
345
450
mV
∆V
OD1
Change in Magnitude of
V
OD1 for Complementary
Output States
4
35
|mV|
V
OS
Offset Voltage
1.10
1.25
1.35
V
∆V
OS
Change in Magnitude of
V
OS for Complementary
Output States
5
25
|mV|
V
OH
Output Voltage High
R
L = 100Ω
1.41
1.60
V
V
OL
Output Voltage Low
0.90
1.07
V
V
IH
Input Voltage High
D
IN,
EN,
EN*
2.0
V
CC
V
V
IL
Input Voltage Low
GND
0.8
V
I
I
Input Current
V
IN =VCC, GND, 2.5V or 0.4V
−10
±1
+10
µA
V
CL
Input Clamp Voltage
I
CL = −18 mA
−1.5
−0.8
V
I
OS
Output Short Circuit Current
V
OUT = 0V (Note 8)
D
OUT−,
D
OUT+
−3.5
−5.0
mA
I
OZ
Output TRI-STATE Current
EN = 0.8V and EN* = 2.0V,
V
OUT =0VorVCC
−10
±1
+10
µA
I
OFF
Power - Off Leakage
V
O = 0V or 2.4V, VCC = 0V or Open
−10
±1
+10
µA
I
CC
No Load Supply Current
Drivers Enabled
D
IN =VCC or GND
V
CC
1.7
3.0
mA
D
IN = 2.5V or 0.4V
4.0
6.5
mA
I
CCL
Loaded Supply Current
Drivers Enabled
R
L = 100Ω (all channels)
V
IN =VCC or GND (all inputs)
15.4
21.0
mA
I
CCZ
No Load Supply Current
Drivers Disabled
D
IN =VCC or GND
EN = GND, EN* = V
CC
2.2
4.0
mA
Switching Characteristics
V
CC = +5.0V, TA = +25˚C (Notes 3, 6, 9)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
t
PHLD
Differential Propagation Delay High to Low
R
L = 100Ω,CL =5pF
(
Figure 2 and Figure 3)
1.0
2.0
3.0
ns
t
PLHD
Differential Propagation Delay Low to High
1.0
2.1
3.0
ns
t
SKD
Differential Skew |t
PHLD –tPLHD|
0
80
400
ps
t
SK1
Channel-to-Channel Skew (Note 4)
0
300
600
ps
t
TLH
Rise Time
0.35
1.5
ns
t
THL
Fall Time
0.35
1.5
ns
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