K4S561633C-RBL datasheet(5/8 Pages) SAMSUNG

5 / 8 page

K4S561633C-R(B)L/N/P

Rev. 1.4 Dec. 2002

CMOS SDRAM

DC CHARACTERISTICS

Recommended operating conditions(Voltage referenced to V SS = 0V, TA =Commercial, Extended, Industrial Temperature)

Notes :

1. Measured with outputs open.

2. Refresh period is 64ms.

3. K4S561633C-R(B)L**

4. K4S561633C-R(B)N**

5. K4S561633C-R(B)P**

6. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)

Parameter

Symbol

Test Condition

Version

Unit

Note

-75

-1H

-1L

Operating Current

(One Bank Active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

Precharge Standby Current

in power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

0.5

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

0.5

Precharge Standby Current

in non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

Active Standby Current

in power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

Active Standby Current

in non power-down mode

(One Bank Active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

Operating Current

(Burst Mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

130

105

Refresh Current

ICC5

tRC

≥ tRC(min)

185

165

Self Refresh Current

ICC6

CKE

≤ 0.2V

-R(B)L

800

-R(B)N

-R(B)P

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