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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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INA114AP bảng dữ liệu(PDF) 2 Page - Texas Instruments |
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INA114AP bảng dữ liệu(HTML) 2 Page - Texas Instruments |
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2 / 17 page  ® INA114 2 SPECIFICATIONS ELECTRICAL At TA = +25°C, VS = ±15V, RL = 2kΩ, unless otherwise noted. T Specification same as INA114BP/BU. NOTE: (1) Temperature coefficient of the “50k Ω” term in the gain equation. INA114BP, BU INA114AP, AU PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems. INPUT Offset Voltage, RTI Initial TA = +25°C ±10 + 20/G ±50 + 100/G ±25 + 30/G ±125 + 500/G µV vs Temperature TA = TMIN to TMAX ±0.1 + 0.5/G ±0.25 + 5/G ±0.25 + 5/G ±1 + 10/G µV/°C vs Power Supply VS = ±2.25V to ±18V 0.5 + 2/G 3 + 10/G TT µV/V Long-Term Stability ±0.2 + 0.5/G T µV/mo Impedance, Differential 1010 || 6 T Ω || pF Common-Mode 1010 || 6 T Ω || pF Input Common-Mode Range ±11 ±13.5 TT V Safe Input Voltage ±40 T V Common-Mode Rejection VCM = ±10V, ∆RS = 1kΩ G = 1 80 96 75 90 dB G = 10 96 115 90 106 dB G = 100 110 120 106 110 dB G = 1000 115 120 106 110 dB BIAS CURRENT ±0.5 ±2 T ±5nA vs Temperature ±8 T pA/ °C OFFSET CURRENT ±0.5 ±2 T ±5nA vs Temperature ±8 T pA/ °C NOISE VOLTAGE, RTI G = 1000, RS = 0Ω f = 10Hz 15 T nV/ √Hz f = 100Hz 11 T nV/ √Hz f = 1kHz 11 T nV/ √Hz fB = 0.1Hz to 10Hz 0.4 T µVp-p Noise Current f=10Hz 0.4 T pA/ √Hz f=1kHz 0.2 T pA/ √Hz fB = 0.1Hz to 10Hz 18 T pAp-p GAIN Gain Equation 1 + (50k Ω/R G) T V/V Range of Gain 1 10000 TT V/V Gain Error G = 1 ±0.01 ±0.05 TT % G = 10 ±0.02 ±0.4 T ±0.5 % G = 100 ±0.05 ±0.5 T ±0.7 % G = 1000 ±0.5 ±1 T ±2% Gain vs Temperature G = 1 ±2 ±10 T ±10 ppm/ °C 50k Ω Resistance(1) ±25 ±100 TT ppm/ °C Nonlinearity G = 1 ±0.0001 ±0.001 T ±0.002 % of FSR G = 10 ±0.0005 ±0.002 T ±0.004 % of FSR G = 100 ±0.0005 ±0.002 T ±0.004 % of FSR G = 1000 ±0.002 ±0.01 T ±0.02 % of FSR OUTPUT Voltage IO = 5mA, TMIN to TMAX ±13.5 ±13.7 TT V VS = ±11.4V, RL = 2kΩ±10 ±10.5 TT V VS = ±2.25V, RL = 2kΩ±1 ±1.5 TT V Load Capacitance Stability 1000 T pF Short Circuit Current +20/–15 T mA FREQUENCY RESPONSE Bandwidth, –3dB G = 1 1 T MHz G = 10 100 T kHz G = 100 10 T kHz G = 1000 1 T kHz Slew Rate VO = ±10V, G = 10 0.3 0.6 TT V/ µs Settling Time, 0.01% G = 1 18 T µs G = 10 20 T µs G = 100 120 T µs G = 1000 1100 T µs Overload Recovery 50% Overdrive 20 T µs POWER SUPPLY Voltage Range ±2.25 ±15 ±18 TT T V Current VIN = 0V ±2.2 ±3 TT mA TEMPERATURE RANGE Specification –40 85 TT °C Operating –40 125 TT °C θ JA 80 T °C/W |
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