Package outline

Page 2

Formosa MS

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

PARAMETER

Drain-source voltage

Drain current-Continuous *1

Total Device Dissipation FR-5

Board *3

TA=25°C

Derate above 25°C

Gate- source voltage-Continuous

Non- repetitive ( tp≤50us)

Operation junction temperature

Symbol

V

DSS

P

D

T

J

R

θJA

MIN.

-55

TYP.

MAX.

100

+150

556

UNIT

Vdc

o

C

o

C/W

o

M

A

V

GS

V

GSM

I

D

225

1.8

±20

±40

170

Vdc

Vpk

mAdc

mW

mW/°C

Typical Thermal resistance junction to ambient

-pulsed*2

I

DM

680

Storage temperature

T

STG

-55

+150

o

C

100V N-Channel Enhancement

Mode Power MOSFET

Mechanical data

•

MIL-STD-750, Method 2026

Epoxy:UL94-V0 rated flame retardant

Molded plastic, SOT-23

FMSBSS123

Features

ow on-resistance R

= 6.0Ω

DS(ON)

ow input capacitance : 20pF

Fast switching speed : 20ns

ow output capacitance : 9pF

ow threshole : 2.8V

In compliance with EU RoHS 2002/95/EC directives

•

•

Document ID

Issued Date

Revised Date

Revision

Page.

SOT-23

Dimensions in inches and (millimeters)

0.035 (0.89)

0.051 (1.30)

0.063 (1.60)

0.047 (1.20)

0.108 (2.75)

0.083 (2.10)

0.027 (0.67)

0.013 (0.32)

(A)

(B)

(C)

DS-231146

2009/08/10

2011/07/21

C

7

*1: The Power Dissipation of the package may result in a lower continuous drain current.

*2: Pulse Width

300us, Duty Cycle

2. 0%

*3: FR- 5= 1. 0x0. 75x0. 062 in.

≤

≤

N-Channel Power MOSFET