Package outline

Page 2

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200mA Silicon PNP Epitaxial Planar

Transistor

Features

collector-emitterbreakdien voltage.

(BV

= -40V@I =-1.0mA)

CEO

C

Small load switch transistor with high gain and low

stauration voltage, is designed for general purpose

amflifier and switching applications at collector current.

Capable of 150mW power dissipation.

Lead-free parts for green partner, exceeds environmental

standards of MIL-STD-19500 /228

Suffix "-H" dinicates Halogen-free part, ex.FMBT3906W.

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Formosa MS

FMBT3906W

Mechanical data

Epoxy:UL94-V0 rated flame retardant

MIL-STD-750, Method 2026

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Document ID

Issued Date

Revised Date

Revision

Page.

Dimensions in inches and (millimeters)

0.032 (0.80)

0.040 (1.00)

0.054 (1.35)

0.046 (1.15)

SOT-323

(A)

(B)

0.096 (2.40)

0.080 (2.00)

(C)

0.021 (0.53)

0.017 (0.42)

PARAMETER

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

Total device dissipation

Storage temperature range

Operating junction temperature range

CONDITIONS

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

D

T

J

T

STG

MIN.

-55

-55

TYP.

MAX.

-40

-40

-5.0

-200

+150

+150

UNIT

V

V

V

mA

o

A

150

O

T = 25 C

A

Junction to ambient

R

θJA

833

Thermal resistance

mW

DS-231132

2009/08/10

2010/03/10

B

10

SMD PNP Transistor