MSD09N66 datasheet(2/6 Pages) BWTECH

2 / 6 page

MSD09N66

100V N-Channel MOSFETs

Publication Order Number: [MSD09N66]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (TC=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

100

VGS

Gate-Source Voltage

±20

Drain Current - Continuous (TC=25°C)

Drain Current - Continuous (TC=100°C)

IDM

Drain Current - Pulsed

180

EAS

Single Pulse Avalanche Energy

IAS

Single Pulse Avalanche Current

Power Dissipation (TC=25°C)

102

Power Dissipation - Derate above 25°C

0.82

W/°C

Storage Temperature Range

-50 to +150

°C

TSTG

Operating Junction Temperature Range

-50 to +150

°C

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

RθJc

Thermal Resistance Junction to ambient

°C/W

RθJA

Thermal Resistance Junction to Case

1.22

Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Off Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = VGS, ID = 250uA

100

△BV

DSS

△TJ

BVDSS Temperature Coefficient

Reference to 25°C , ID = 1mA

0.05

V/°C

IGSS

Gate-Source Leakage Current

VDS = 0 V , VGS = ±20 V

±100

IDSS

Drain-Source Leakage Current

VDS = 100 V , VGS = 0 V , TJ= 25°C

VDS = 80 V , VGS = 0 V , TJ= 125°C

On Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

RDS(on)

Drain-Source On-Resistance

VGS = 10 V, ID = 25 A

VGS = 6 V , ID = 15 A

VGS = 4.5 V , ID = 6 A

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID =-250μA

△V

GS(th)

V GS(th) Temperature Coefficient

VDS = VGS, ID =-250μA

-5

mV/°C

gfs

Forward Tranconductance

VDS = 10 V , ID = 3 A

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