2SC4548 datasheet(2/4 Pages) BWTECH

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2SC4548

TRANSISTOR (NPN)

Publication Order Number: [2SC4548]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS (Ta=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

400

VCEO

Collector-Emitter Voltage

400

VEBO

Emitter-Base Voltage

Collector Current

200

Collector Dissipation

500

RθJA

Thermal Resistance From Junction To Ambient

250

°C/W

Junction Temperature

150

°C

Tstg

Storage Temperature Range

-55 to +150

°C

ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

MIN

TYP

MAX

UNIT

V(BR)CBO

Collector-base breakdown voltage

IC = 10μA , IE = 0

400

V(BR)CEO

Collector-emitter breakdown voltage

IC = 1 mA , IB = 0

400

V(BR)EBO

Emitter-base breakdown voltage

IE = 10μA , IC = 0

ICBO

Collector cut-off current

VCB = 300 V , IE = 0

0.1

μA

IEBO

Emitter cut-off current

VEB = 4 V , IC = 0

0.1

μA

hFE

DC current gain

VCE = 10 V , IC = 50 mA

200

VCE(sat)

Collector-emitter saturation voltage

IC = 50 mA , IB = 5 mA

0.6

VBE(sat)

Base-emitter saturation voltage

IC = 50 mA , IB = 5 mA

Transition frequency

VCE = 30 V , IC = 10 mA

MHz

Cob

Collector output capacitance

VCB = 30 V , IE = 0

f = 1.0MHz

CLASSIFICATION OF hFE

Marking

Rank

Range

60-120

100-200

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