2SD2908 datasheet(2/4 Pages) BWTECH

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2SD2908

Low VCE(sat) transistor(80V,0.7A)

Publication Order Number: [2SD2908]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS (Ta=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

Collector Current

Collector Dissipation

500

Tj,Tstg

Junction and Storage Temperature

-55 to +150

°C

ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

MIN

TYP

MAX

UNIT

V(BR)CBO

Collector-base breakdown voltage

IC = 50μA , IE = 0

V(BR)CEO

Collector-emitter breakdown voltage

IC = 1 mA , IB = 0

V(BR)EBO

Emitter-base breakdown voltage

IE = 50μA , IC = 0

ICBO

Collector cut-off current

VCB = 40 V , IE = 0

0.5

μA

IEBO

Emitter cut-off current

VEB = 5 V , IC = 0

0.5

μA

hFE

DC current gain

VCE = 2 V , IC = 0.5 A

120

390

VCE(sat)

Collector-emitter saturation voltage

IC = 4 A , IB = 0.1 A

0.25

1.0

Transition frequency

VCE = 6 V , IC = 50 mA

f = 100MHz

150

MHz

Cob

Collector output capacitance

VCB = 20 V , IE = 0

f = 1.0MHz

CLASSIFICATION OF hFE

Marking

AHQ

AHR

Rank

Range

120-270

180-390

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