25± 0.3

φ 3.2±

0.15

1.1± 0.2

7.5± 0.2

3.7± 0.2

4.7± 0.2

2.8± 0.2

0.7± 0.1

1.2± 0.2

FEATURES

Rating to 1000V PRV

Surge overload rating to 150 Am peres peak

Ideal for printed circuit board

Reliable low cos t cons truction utilizing m olded

plas tic technique res ults in inexpens ive product

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unles s otherwis e s pecified.

Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.

KB

J

4D

KB

J

4G

KB

J

4J

KB

J

4K

KB

J

4M

UNITS

Maximum recurrent peak reverse voltage

200

400

600

800

1000

V

Maximum RMS voltage

140

280

420

560

700

V

Maximum DC blocking voltage

200

400

600

800

1000

V

Maximum average forw ard

Output current

@T

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

Maximum instantaneous forw ard voltage

at 2.0 A

V

Maximum reverse current

@T

μA

at rated DC blocking voltage

@T

mA

Typical junction capacitance per element

pF

Typical thermal resistance

/W

Operating junction temperature range

Storage temperature range

KBJ

4A

KBJ

4B

50

100

1.0

2.Dev ice mounted on 300mm X 300mm X 1.6mm cu Plate heatsink.

1.0

A

4.0

A

KBJ4A- - - KBJ4M

SILICON BRIDGE RECT IFIERS

15

0.0

KBJ4

100

70

VOLT AGE RANGE: 50 --- 1000 V

CURRENT :

4.0 A

35

50

Lead s olderable per MIL-STD-202 m ethod 208

Polarity:Sym bols m olded on body

Mounting pos ition: Any

MECHANCAL DATA

Weight:0.16 ounces, 4.45 grams

NOTES:1.Measured at 1.0MH

- 55 ---- + 150

- 55 ---- + 150

45

2.2

10.0

Dimensions in millimeters

Diode Semiconductor Korea

www.diode.kr