TLV521 datasheet(4/27 Pages) TI1

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TLV521

SNOSD26 – MAY 2016

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Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in

very limited self-heating of the device such that TJ = TA. Parametric performance, as indicated in the electrical tables, is not ensured

under conditions of self heating where TJ > TA.Absolute Maximum Ratings indicate junction temperature limits beyond which the device

may be permanently degraded, either mechanically or electrically.

6.5 Electrical Characteristics

Unless otherwise specified, all limits for TA = 25°C, V

+ = 3.3 V, V− = 0 V, V

CM = VO = V

+/2, and R

L > 1 MΩ.

(1)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VOS

Input Offset Voltage

VCM = 0.3 V

–3

0.1

VCM = 3 V

–3

0.1

TCVOS

Input Offset Voltage Drift

±1.5

μV/°C

IBIAS

Input Bias Current

IOS

Input Offset Current

CMRR

Common Mode Rejection Ratio

0 V

≤ VCM ≤ 3.3 V

0 V

≤ VCM ≤ 2.2 V

100

PSRR

Power Supply Rejection Ratio

V+ = 1.8 V to 3.3 V; VCM = 0.3 V

100

CMVR

Common Mode Voltage Range

CMRR

≥ 70 dB

3.3

AVOL

Large Signal Voltage Gain

VO = 0.5 V to 2.8 V

RL = 100 kΩ to V

+/2

110

Output Swing High

RL = 100 kΩ to V

+/2

VIN(diff) = 100 mV

mV from

either rail

Output Swing Low

RL = 100 kΩ to V

+/2

VIN (diff) = −100 mV

Output Current

Sourcing, VO to V

−

VIN(diff) = 100 mV

Sinking, VO to V

VIN(diff) = −100 mV

Supply Current

VCM = 0.3 V

350

500

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