DS36C200 datasheet(2/10 Pages) NSC

2 / 10 page

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage (V

CC)

−0.3V to +6V

Enable Input Voltage

(DE, RE*)

−0.3V to (V

CC + 0.3V)

Voltage (DI/RO)

−0.3V to +5.9V

Voltage (DO/RI±)

−0.3V to +5.9V

Maximum Package Power Dissipation @+25˚C

M Package

1255 mW

Derate M Package

10.04 mW/˚C above +25˚C

Storage Temperature Range

−65˚C to +150˚C

Lead Temperature Range

(Soldering, 4 sec.)

+260˚C

ESD Rating (Note 4)

(HBM, 1.5 k

Ω, 100 pF)

≥ 3.5 kV

(EIAJ, 0

Ω, 200 pF)

≥ 300V

Recommended Operating

Conditions

Min

Typ

Max

Units

Supply Voltage (V

CC)

+4.5

+5.0

+5.5

Receiver Input Voltage

2.4

Operating Free Air

Temperature (T

˚C

Electrical Characteristics (Notes 2, 3, 7)

Over supply voltage and operating temperature ranges, unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DIFFERENTIAL DRIVER CHARACTERISTICS (RE* = V

CC)

Output Differential Voltage

L = 55Ω,(Figure 1)

DO+,

DO−

172

210

285

∆V

OD Magnitude Change

Output High Voltage

1.36

Output Low Voltage

1.15

Offset Voltage

1.0

1.25

1.6

∆V

Offset Magnitude Change

OZD

TRI-STATE® Leakage

OUT = VCC or GND

−10

±1

+10

µA

OXD

Power-Off Leakage

OUT = 5.5V or GND, VCC = 0V

−10

±1

+10

µA

OSD

Output Short Circuit Current

OUT = 0V

−4

−9

DIFFERENTIAL RECEIVER CHARACTERISTICS (DE = GND)

Input Threshold High

CM = 0V to 2.3V

RI+,

RI−

+100

Input Threshold Low

−100

Input Current

IN = +2.4V or 0V

−10

±1

+10

µA

Output High Voltage

OH = −400 µA

3.8

4.9

Inputs Open

3.8

4.9

Inputs Terminated, R

t = 55Ω

3.8

4.9

Inputs Shorted, V

ID = 0V

4.9

Output Low Voltage

OL = 2.0 mA, VID = −200 mV

0.1

0.4

OSR

Output Short Circuit Current

OUT = 0V

−15

−60

−100

DEVICE CHARACTERISTICS

Input High Voltage

DI,

RE*

2.0

Input Low Voltage

GND

0.8

Input High Current

IN = VCC or 2.4V

±1

±10

µA

Input Low Current

IN = GND or 0.4V

±1

±10

µA

Input Clamp Voltage

CL = −18 mA

−1.5

−0.8

CCD

Power Supply Current

No Load, DE = RE* = V

L = 55Ω,DE = RE* = VCC

CCR

DE = RE* = 0V

Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices

should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.

Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except VOD and VID.

Note 3: All typicals are given for VCC = +5.0V and TA = +25˚C.

Note 4: ESD Rating: HBM (1.5 k

Ω, 100 pF) ≥ 3.5 kV

EIAJ (0

Ω, 200 pF) ≥ 300V

Note 5: CL includes probe and fixture capacitance.

DS36C200 bảng dữ liệu(PDF) 2 Page - National Semiconductor (TI)

DS36C200 bảng dữ liệu(HTML) 2 Page - National Semiconductor (TI)

Html Pages

1 2 3 4 5 6 7 8 9 10

bảng dữ liệu tải về

Link URL