LLDB3 datasheet(1/2 Pages) DSK

tên linh kiện	LLDB3

Giải thích chi tiết về linh kiện	SILICON BIDIRECTIONAL DIACS

PDF	2 Pages

Scroll/Zoom	100%

nhà sản xuất	DSK [Diode Semiconductor Korea]

Trang chủ	http://www.diode.kr/

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1 / 2 page

FEATURES

ABSOLUTE RATINGS

Power dissipation on printed

TA=50

oC circuit (L=10mm)

Pc

mW

Repetitive peak on-state

tp=20

S

current

f=120Hz

ITRM

A

Operating junction temperature

TJ

oC

Storage temperature

TSTG

oC

Min

28

35

Typ

32

40

Max

36

45

Output voltage (NOTE 1)

Vo

Min

V

Breakover current (NOTE 1)

IBO

Max

A

Rise time (NOTE 1)

tr

Typ

S

Leakage current (NOTE 1)

IR

Max

A

2. Connected in parallel w ith the devices

NOTE: 1. Electrical characteristics applicable in both forw ard and reverse dirctions.

5.0

100.0

1.5

V

R=0.5 VBO

See FIG.1

10.0

C=22nf(NOTE 2)

Breakover voltage (NOTE 1)

Breakover voltage symmetry

Dynamic breakover voltage (NOTE 1)

VBO

UNITS

150.0

I+VBO I-

I-VBOI

I±

VI

C=22nf(NOTE 2)

See FIG.1

I=(IBO to IF=10mA)

See FIG.1

V

±3.0

V

Parameters

Symbols

UNITS

LLDB3,LLDB4

VOLTAGE RANGE: 28-45 V

SILICON BIDIRECTIONAL DIACS

The three layer,two termnal,axial lead,hermetically

1111sealed diacs are designed specifically for triggering

1111thyristors.They demonstrate low breakover current at

1111breakover voltage as they withstand peak pulse

1111current,The breakover symmetry is within three

1111volts(LLDB3,LLDB4). These diacs are intended for use in

CCC

thyrisitors phase control,circuits for lamp dimming,

FFFI universal motor speed control,and heat control.

Parameters

See FIG.3

2.0

-40--- +125

C=22nf(NOTE 2)

See FIG.1

ELECTRICAL CHARACTERISTICS

Test Conditions

-40--- +125

LLDB3

LLDB4

See FIG.2

Max

Min

Diode Semiconductor Korea

www.diode.kr

3.4

+0.3

-0.1

0.4±0.1

Cathode indification

MINI-MELF

Dimensions in millimeters

LLDB3.LLDB4

Số phần tương tự - LLDB3

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Formosa MS	LLDB3	410Kb / 4P	DIAC
SEMTECH ELECTRONICS LTD...	LLDB3	166Kb / 1P	SILICON BIDIRECTIONAL DIACS
Jinan Jingheng (Group) ...	LLDB3	63Kb / 2P	SILICON BIDIRECTIONAL DIAC
Taiwan Semiconductor Co...	LLDB3	89Kb / 2P	150mW Bi-directional Trigger Diode
Rectron Semiconductor	LLDB3	179Kb / 4P	TRIGGER DIODES

More results

Mô tả tương tự - LLDB3

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
SEMTECH ELECTRONICS LTD...	LSDB3	168Kb / 1P	SILICON BIDIRECTIONAL DIACS
Galaxy Semi-Conductor H...	DB3M	76Kb / 2P	SILICON BIDIRECTIONAL DIACS
Tiger Electronic Co.,Lt...	DB3-DB4	137Kb / 2P	Silicon Bidirectional Diacs
Shanghai Shunye Electro...	DB3M	199Kb / 2P	SILICON BIDIRECTIONAL DIACS
Diode Semiconductor Kor...	DB3	333Kb / 2P	SILICON BIDIRECTIONAL DIACS
Diode Semiconductor Kor...	DB3M	88Kb / 2P	SILICON BIDIRECTIONAL DIACS
Zibo Seno Electronic En...	LLDB3	362Kb / 2P	SILICON BIDIRECTIONAL DIACS
SAMYANG ELECTRONICS CO....	DB3	400Kb / 2P	SILICON BIDIRECTIONAL DIACS
	DB3	399Kb / 2P	SILICON BIDIRECTIONAL DIACS
	DB3	400Kb / 2P	SILICON BIDIRECTIONAL DIACS

More results

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Số phần tương tự - LLDB3

Mô tả tương tự - LLDB3

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