| công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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DB4M bảng dữ liệu(PDF) 1 Page - Diode Semiconductor Korea |
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DB4M bảng dữ liệu(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page ![]() 3.4 +0.3 -0.1 0.4±0.1 Cathode indification FEATURES ABSOLUTE RATINGS Power dissipation on printed TA=50 oC Pc mW Repetitive peak on-state tp=20 S current f=120Hz ITRM A Operating junction temperature TJ oC Storage temperature TSTG oC Min 28 35 Typ 32 40 Max 36 45 Output voltage (NOTE 1) Vo Min V Breakover current (NOTE 1) IBO Max A Rise time (NOTE 1) tr Typ S Leakage current (NOTE 1) IR Max A 2. Connected in parallel w ith the devices NOTE: 1. Electrical characteristics applicable in both forw ard and reverse dirctions. 5.0 5.0 100.0 1.5 V R=0.5 VBO See FIG.1 10.0 C=22nf(NOTE 2) Breakover voltage (NOTE 1) Breakover voltage symmetry Dynamic breakover voltage (NOTE 1) VBO UNITS 150.0 I+VBO I- I-VBOI I± VI C=22nf(NOTE 2) See FIG.1 I=(IBO to IF=10mA) See FIG.1 V V ±3.0 V Parameters Symbols UNITS DB3M,DB4M DB3M.DB4M VOLTAGE RANGE: 28-45 V SILICON BIDIRECTIONAL DIACS MINI-MELF The three layer,two termnal,hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low break over current at break over voltage as they withstand peak pulse current, The breakover symmetry is within three volts(DB6). These diacs are intended for use in thyrisitors phase control,circuits for lamp dimming,universal motor speed control,and heat control. Parameters See FIG.3 2.0 -40--- +125 C=22nf(NOTE 2) See FIG.1 ELECTRICAL CHARACTERISTICS Test Conditions -40--- +125 DB3M DB4M See FIG.2 Max Min Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
Số phần tương tự - DB4M |
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Mô tả tương tự - DB4M |
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