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LP5550 bảng dữ liệu(PDF) 3 Page - Texas Instruments

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LP5550 bảng dữ liệu(HTML) 3 Page - Texas Instruments

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LP5550
www.ti.com
SNVS378G – OCTOBER 2005 – REVISED APRIL 2013
Pin Descriptions (continued)
Pin No.
Name
I/O
Type
Description
9
VBATSW
P
P
Battery supply voltage for switching regulator
10
SW
O
A
Switcher pin connected to coil
11
SWGND
G
G
Switcher ground
12
VBAT2
P
P
Battery supply voltage
13
VO3
O
A
LDO3 output, on-chip memory supply voltage
14
VFB
I
A
Switcher output voltage for supplying SoC core logic
15
AGND
G
G
Analog Ground
16
ENABLE
I
D
Enable, active high
A: Analog Pin
D: Digital Pin
I: Input Pin
O: Output Pin
I/O: Input/Output Pin
P: Power Pin
G: Ground Pin
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2) (3) (4)
VBAT1, VBAT2, VBATSW
-0.3 to +6.0V
VO1, VO2, VO3 to GND
-0.3 to +VBAT1+0.3V
ENABLE, RESETN, VFB, SW, SPWI, SCLK, PWROK
-0.3 to VBAT2+0.3V
DGND, AGND, SWGND to GND SLUG
±0.3V
Junction Temperature (TJ-MAX)
150°C
Storage Temperature Range
-65°C to 150°C
Maximum Continuous Power Dissipation (PD-MAX)(5)
1.0 W
Maximum Lead Temperature (Soldering)
See(5)
ESD Rating(6)
Human Body Model
All pins
2.0kV
(1)
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under
which operation of the device is ensured. Operating Ratings do not imply ensured performance limits. For ensured performance limits
and associated test conditions, see the Electrical Characteristics tables.
(2)
All voltages are with respect to the potential at the GND pin.
(3)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(4)
For detailed soldering specifications and information, please refer to Application Note AN-1187 : Leadless Leadframe Package (LLP)
(SNOA401).
(5)
The amount of Absolute Maximum power dissipation allowed for the device depends on the ambient temperature and can be calculated
using the formula P = (TJ – TA)/
θJA, (1) where TJ is the junction temperature, TA is the ambient temperature, and JA is the junction-to-
ambient thermal resistance. Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications
where high maximum power dissipation exists, special care must be paid to thermal dissipation issues in board design.Internal thermal
shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ=150°C (typ.) and disengages at
TJ=140°C (typ.).
(6)
The Human body model is a 100 pF capacitor discharged through a 1.5 k
Ω resistor into each pin.
Copyright © 2005–2013, Texas Instruments Incorporated
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