STPS30H100CW datasheet(2/5 Pages) STMICROELECTRONICS

tên linh kiện	STPS30H100CW

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STPS30H100CW/CT

2/5

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

Per diode

Total

1.6

0.9

°C/W

Rth (c)

Coupling

0.1

THERMAL RESISTANCES

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage current

Tj = 25°C

VR =VRRM

5µA

Tj = 125°C

VF **

Forward voltage drop

Tj = 25

°CIF = 15 A

0.80

Tj = 125°C

IF = 15 A

0.64

0.67

Tj=25

°CIF = 30 A

0.93

Tj = 125°C

IF = 30 A

0.74

0.80

STATIC ELECTRICAL CHARACTERISTICS

Pulse test :

* tp=5ms,

δ <2%

** tp = 380 µs,

δ <2%

To evaluate the maximum conduction losses use the following equation :

P=0.54xIF(AV) + 0.0086 x IF

(RMS)

2468

IF(av) (A)

PF(av)(W)

δ=tp/T

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

100

125

150

175

Tamb(°C)

IF(av)(A)

Rth(j-a)=15°C/W

Rth(j-a)=Rth(j-c)

δ=tp/T

Fig. 2: Average forward current versus ambient

temperature (

δ=0.5, per diode).

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

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