DN2530 datasheet(2/13 Pages) MICROCHIP

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DN2530

DS20005451A-page 2

 2016 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS†

Drain-to-source voltage .........................................................................................................................................BVDSX

Drain-to-gate voltage.............................................................................................................................................BVDGX

Gate-to-source voltage............................................................................................................................................ ±20V

Operating and Storage Temperature.......................................................................................................... -55 to 150 °C

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.

2: Specification is obtained by characterization and is not 100% tested.

† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at those or any other conditions above those indicated in the

operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods

may affect device reliability.

DC AND AC CHARACTERISTICS

Electrical Specifications: Unless otherwise specified, for all specifications TA = +25°C

Parameter

Symbol

Min

Typ

Max

Units Conditions

DC Parameters (Note 1, unless otherwise stated)

Drain-to-source breakdown voltage

BVDSX

300

VGS= -5.0V, ID= 100 µA

Gate-to-source off voltage

VGS(OFF)

-1.0

-3.5

VDS= 25V, ID= 10 µA

VGS(OFF) change with temperature

∆VGS(OFF)

-4.5

mV/°C VDS= 25V, ID= 10 µA(Note 2)

Gate body leakage current

IGSS

100

VGS= ±20V, VDS= 0V

Drain-to-source leakage current

ID(OFF)

µA

VDS= Max rating, VGS= -10V

1.0

VDS= 0.8 Max Rating,

VGS= -10V, TA= 125°C (Note 2)

Saturated drain-to-source current

IDSS

200

VGS= 0V, VDS= 25V

Static drain-to-source on-state

resistance

RDS(ON)

Ω

VGS= 0V, ID= 150 mA

Change in RDS(ON) with temperature

∆RDS(ON)

1.1

%/°C VGS= 0V, ID= 150 mA(Note 2)

AC Parameters (Note 2)

Forward transconductance

GFS

300

mmho VDS= 10V, ID= 150 mA

Input capacitance

CISS

300

VGS= -10V,

VDS= 25V,

f = 1 MHz

Common source output capacitance

COSS

Reverse transfer capacitance

CRSS

Turn-on delay time

td(ON)

VDD= 25V,

ID= 150 mA,

RGEN= 25Ω,

Rise time

Turn-off delay time

td(OFF)

Fall time

Diode Parameters

Diode forward voltage drop

VSD

––

1.8

VGS = -10V, ISD= 150 mA

(Note 1)

Reverse recovery time

trr

–600

–

VGS = -10V, ISD= 1.0A (Note 2)

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