SN761677

SLES066A – DECEMBER 2002

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2

Thesedevices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during

storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range unless otherwise noted(1)

UNIT

Supply voltage (2), VCC

VCC, TUVCC

–0.4 V to 7 V

Input voltage 1 (2), VGND

RF GND, OSC GND, TUGND

–0.4 V to 0.4 V

Input voltage 2 (2), V(VTU)

VTU (4)

–0.4 V to 35 V

Input voltage 3 (2), VIN

Other input pins

–0.4 V to 7 V

Continuous total dissipation (3), PD

TA ≤ 25°C

1168 mW

Operating free–air temperature, TA

–20

°C to 85°C

Storage temperature range, Tstg

–65

°C to 150°C

Maximum junction temperature, TJ

150

°C

Maximum lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260

°C

Maximum short circuit time, tSC(max)

All pins to VCC/TUVCC, IFGND, OSCGND, RFGND, TUGND

10 sec

(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Voltage values are with respect to the IF GND of the circuit.

(3) Derating factor is 9.34 mW/

°C for TA ≤ 25°C.

(4) 30 V max, when input from external power supply.

RECOMMENDED OPERATING CONDITIONS

MIN

NOM

MAX

UNIT

Supply voltage, VCC

4.5

5

5.5

V

Band switch driver source current, IBS

One port on

10

mA

NPN port sink current, INPN

One port on

–10

–15

mA

Operating free-air temperature, TA

–20

85

°C

CAUTION:

It is advised that precautions be taken to avoid damage due to high static voltages or electrostatic fields while handling this device. UHF

OSC (pins 6–9) can withstand 1.5 kV and all other pins can withstand 2 kV, according to the Human Body Model (1.5 k

Ω, 100 pF).