6

HBFP-0420 Die Model and PSPICE Parameters

CMP9

R

CMP7

R

CMP8

R

CMP69

R

R-1 OH

R=.194 OH

R=7.78 OH

R =12 OH

TEMP=

MODEL=DBE

REGION=

AREA=

AREA=3

REGION=

MODEL=BJTMODEL

AREA=

REGION=

MODEL=DCS

TEMP=

AREA=

REGION=

MODEL = DBC

TEMP=

C =7E-3 pF

C = 19E-3 pF

XX

CMP1

NPNBJTSUBST

CMP5

C

CMP6

C

CMP2

DIODE

CMP16

DIODE

CMP3

DIODE

B

E

XX

C

IS=I.40507E-17

BV=

IBV=

IMAX=

XTI=

TNOM=21

KF=

AF=

ISR=

NR=

IKF=

NBV=

IBVL=

NBVL=

FFE=

RS=

CJO=2.393E-14

TT=

EG=

VJ=0.729

M=0.44

N=1

FC=0.8

CMP10

DIODEMODELFORM

# DIODE MODEL #

MODEL = DBC

IS=IE-24

BV=

IBV=

IMAX=

XTI=

TNOM=21

KF=

AF=

ISR=

NR=

IKF=

NBV=

IBVL=

NBVL=

FFE=

RS=2.17347E2

CJO=8.974E-14

TT=

EG=

VJ=0.6

M=0.42

N=

FC=0.8

CMP12

DIODEMODELFORM

# DIODE MODEL #

MODEL = DCS

IS=IE-24

BV=

IBV=

IMAX=

XTI=

TNOM=21

KF=

AF=

ISR=

NR=

IKF=

NBV=

IBVL=

NBVL=

FFE=

RS=

CJO=2.593E-14

TT=

EG=

VJ=0.8971

M=2.292E-1

N=1.0029

FC=0.8

CMP11

DIODEMODELFORM

# DIODE MODEL #

MODEL = DCE

NPN=yes

PNP=

VTF=0.8

ITF=2.21805486E-1

PTF=22

XTB=0.7

APPROXOB=yes

Forward

BF=1E6

IKE=1.4737E-1

ISE=7.094E-20

NE=1.006

VAF=4.4E1

NF=1

TF=5.3706E-12

XTF=20

Reverse

BR=1

IKR=1.1E-2

ISC=

NC=2

VAR=3.37

NR=1.005

TR=4E-9

Noise

KF=

AF=

KB=

AB=

FB=

Diode and junction

EG=1.17

IS=4.4746E-18

IMAX=

XTI=3

TNOM=21

Substrate

IS5=

NS=

Parasitics

RB=9.30144818

IRB=3.029562E-6

RBM=.1

RE=

RC=

CJC=2.7056E-14

VJC=.6775

MJC=0.3319

FC=0.8

CJE=7.474248E-14

VJE=0.9907

MJE=0.5063

CJS=

VJS=

MJS=

CMP68

BITMODELFORM

# BJT MODEL #

MODEL = BJTMODEL

XCJC=4.39790997E-1

This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more

precise and accurate design, please refer to the measured data in this data sheet.

Note:

The value of beta was high (BF = 1E6) to compensate for the fact that diode DBE reduces the current going into the

base (current flows through DBE). The diodes are necessary to model the non-linear effects.