BGS2 datasheet(1/8 Pages) BEREX

tên linh kiện	BGS2

Giải thích chi tiết về linh kiện	50-4000 MHz SILICON GERMANIUM Gain Block

PDF	8 Pages

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nhà sản xuất	BEREX [BeRex Corporation]

Trang chủ	http://www.berex.com

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1

Rev. E

BeRex

●website: www.berex.com

●email: sales@berex.com

Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.

50-4000 MHz SILICON GERMANIUM Gain Block

BGS2

 Single Fixed 3V supply

 No Dropping Resistor Required

 No matching circuit needed

 Lead-free/Green/RoHS compliant SOT-363 package

 Application: Driver Amplifier, Cellular, PCS, GSM,

UMTS, WCDMA, Wireless Data

BeRex’s BGS2 is a high SiGe HBT MMIC am-

plifier, internally matched to 50 Ohms with-

out the need for external components. De-

signed to run directly from a 3V supply. The

BGS2 is designed for high linearity 3V gain

block applications . It is packaged in a RoHS-

compliant with SOT-363 surface mount

package.

Product Description

Device Features

 Driver Amplifier

 Cellular, PCS, GSM, UMTS, WCDMA

Applications

Applications Circuit

*C1, C2, C3 =100 pF ± 5%; C4 = 1000 pF ± 5%; C5 = 10uF; **L1 = 56nH

1 Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω system.

2 OIP3 _ measured with two tones at an output of 0 dBm per tone separated by 1 MHz.

Typical Performance

1

Absolute Maximum Ratings

Min.

Typical

Max.

Unit

Bandwidth

70

4000

MHz

IC @ (Vc = 3V)

30

34

38

mA

VC

3.0

V

dG/dT

-0.005

dB/°C

RTH

130

°C/W

Parameter

Unit

Rating

Operating Case Temperature

°C

-40 to +85

Storage Temperature

°C

-55 to +155

Junction Temperature

°C

+150

Operating Voltage

V

+3.8

Supply Current

mA

100

Input RF Power

dBm

15

Operation of this device above any of these parameters may result in permanent damage.

**less than 56nH improves RF performance at over 0.9GHz.

*1uH or higher value L1 improves RF performance at under 900MHz.

*Optimum value of L1 may vary with board design.

BGS2

L1

C1

C3

C4

RFin

RFout

C5

+3V

C2

*C1,C2=2000pF, L1=1uH for 70MHz application,

BS2

X

IN

GND

OUT

GND

Pin Description

RF IN

3

RF OUT

6

GND

1,2,4,5

Part Marking (X: Wafer number)

Parameter

Frequency

Unit

70

900

1900 2450 2650 3500 MHz

Gain

26.5

23.6

19.8

18.1

17.2

15

dB

S11

-19.6 -18.3 -18.6 -18.4 -17.6 -13.7

dB

S22

-15.6 -12.8

-9.9

-10.5 -13.2 -15.7

dB

OIP3

2

28

25.5

24.5

22.5

25

19.2

dBm

P1dB

15.6

13.4

12.8

10.8

10.4

8.7

dBm

N.F

2.7

2.3

2.2

2.3

2.5

2.7

dB

Application Circuit Values Example

Freq.

70~900MHz

900MHz ~ 3GHz

3GHz ~ 4GHz

C1/C2

2nF

100pF

L1

1uH

56nH

27nH

(1608 Chip Ind.)

*C1,C2=100pF, L1=27nH for 3.5GHz application.

Số phần tương tự - BGS2

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