IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYY8N90C3

IXYP8N90C3

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

2.9

4.8

S

C

400

pF

C

oes

V

24

pF

C

res

7.8

pF

Q

g(on)

13.3

nC

Q

ge

I

3.4

nC

Q

gc

5.8

nC

t

d(on)

16

ns

t

ri

20

ns

E

on

0.46

mJ

t

d(off)

40

ns

t

fi

130

ns

E

0.18

0.50

mJ

t

d(on)

17

ns

t

ri

22

ns

E

on

1.00

mJ

t

d(off)

75

ns

t

fi

163

ns

E

off

0.22

mJ

R

thJC

1.20 °C/W

R

thCS

TO-252

0.35

°C/W

TO-220

0.50

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2

Pins: 1 - Gate

2 - Collector

3 - Emitter

TO-220 Outline

TO-252 AA Outline

Dim.

Millimeter

Inches

Min. Max.

Min.

Max.

A

2.19 2.38

0.086

0.094

A1

0.89 1.14

0.035

0.045

A2

0 0.13

0

0.005

b

0.64 0.89

0.025

0.035

b1

0.76 1.14

0.030

0.045

b2

5.21 5.46

0.205

0.215

c

0.46 0.58

0.018

0.023

c1

0.46 0.58

0.018

0.023

D

5.97 6.22

0.235

0.245

D1

4.32 5.21

0.170

0.205

E

6.35 6.73

0.250

0.265

E1

4.32 5.21

0.170

0.205

e

2.28 BSC

0.090 BSC

e1

4.57 BSC

0.180 BSC

H

9.40 10.42

0.370

0.410

L

0.51 1.02

0.020

0.040

L1

0.64 1.02

0.025

0.040

L2

0.89 1.27

0.035

0.050

L3

2.54 2.92

0.100

0.115

1. Gate

2. Collector

3. Emitter

4. Collector

Bottom Side