IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY2N65X2

IXTP2N65X2

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

2

A

I

SM

Repetitive, pulse Width Limited by T

JM

8

A

V

SD

I

1.4

V

t

rr

137

ns

Q

RM

508

nC

I

RM

7.4

A

I

V

TO-252 AA Outline

1 - Gate

2,4 - Drain

3 - Source

TO-220 Outline

1 - Gate

2,4 - Drain

3 - Source

E1

E

A

D1

D

Q

L1

oP

H1

A1

L

A2

D2

e

c

e1

e1

3X b2

e

3X b

EJECTOR

PIN

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

1.1

1.8

S

R

Gi

Gate Input Resistance

14



C

iss

180

pF

C

oss

V

129

pF

C

rss

0.7

pF

C

o(er)

22

pF

C

o(tr)

45

pF

t

d(on)

15

ns

t

r

19

ns

t

d(off)

20

ns

t

f

14

ns

Q

g(on)

4.3

nC

Q

gs

V

0.8

nC

Q

gd

2.1

nC

R

thJC

2.27

C/W

R

thCS

TO-220

0.50

C/W

Resistive Switching Times

V

R

Effective Output Capacitance

Energy related

Time related

V

V

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.