IXA4IF1200TC

preliminary

-di /dt =

A/µs

T

=

°C

V

CES

V

1200

collector emitter voltage

collector emitter saturation voltage

T

= 25°C

collector current

A

9

A

C

VJ

Symbol

Definition

Ratings

typ.

max.

min.

Conditions

Unit

5

V

V

CE(sat)

total power dissipation

45

W

collector emitter leakage current

6.5

V

turn-on delay time

70

ns

t

reverse bias safe operating area

A

V

±20

V

GEM

max. transient gate emitter voltage

T

=

°C

C

V

P

tot

gate emitter threshold voltage

RBSOA

9

±30

T

=

°C

T

=

°C

VJ

V

max. DC gate voltage

I

C25

I

C

T

=

25°C

VJ

I =

A; V = 15 V

CGE

T

= 25°C

VJ

V

GE(th)

I

CES

I =

mA; V = V

CGE

CE

V = V

; V = 0 V

CE

CES

GE

I

GES

T

= 25°C

VJ

gate emitter leakage current

V

= ±20 V

GE

2.1

2.1

5.9

5.4

mA

0.1

mA

0.1

500

G(on)

total gate charge

V =

V; V = 15 V; I =

A

CE

Q

GE

C

12

nC

t

t

t

E

E

d(on)

r

d(off)

f

on

off

40

ns

250

ns

100

ns

0.4

mJ

0.3

mJ

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V

=

V; I =

A

V

= ±15 V; R =

Ω

CE

C

GE

G

V

= ±15 V; R =

Ω

GE

G

V

=

V

CEmax

1200

short circuit safe operating area

µs

SCSOA

10

T

=

°C

VJ

V

=

V; V = ±15 V

CE

GE

short circuit duration

t

short circuit current

I

SC

SC

R =

Ω; non-repetitive

G

12

A

R

thJC

thermal resistance junction to case

2.7 K/W

V

RRM

V

1200

max. repetitive reverse voltage

T

= 25°C

VJ

T

= 25°C

forward current

A

10

A

C

6

T

=

°C

C

I

F25

I

F

T

= 25°C

forward voltage

V

2.20

V

VJ

1.90

T

= 125°C

VJ

I =

A

F

T

= 25°C

reverse current

mA

*

mA

VJ

*

T

= 125°C

VJ

R

RRM

T

= 125°C

VJ

Q

I

t

rr

RM

rr

0.5

µC

5

A

350

ns

reverse recovery charge

max. reverse recovery current

reverse recovery time

V =

I =

A; V = 0 V

F

FGE

E

rec

0.1

mJ

reverse recovery energy

R

R

thJC

thermal resistance junction to case

3 K/W

V = V

T

= 25°C

C

T

= 25°C

VJ

T

=

°C

VJ

VJ

3

0.1

3

3

3

3

330

330

330

600

900

-150

600

I

CM

1.8

thermal resistance case to heatsink

K/W

R

thCH

thermal resistance case to heatsink

K/W

* not applicable, see Ices value above

IGBT

Diode

600 V

V

=

V

CEmax

900

100

100

100

100

125

125

125

125

125

nA

0.15

0.15

IXYS reserves the right to change limits, conditions and dimensions.

20111109a

Data according to IEC 60747and per semiconductor unless otherwise specified

© 2011 IXYS all rights reserved