DMP4025LSD

Document Number: DS35936 Rev: 1 - 2

4 of 8

www.diodes.com

June 2012

© Diodes Incorporated

A Product Line of

Diodes Incorporated

DMP4025LSS

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-40

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

-1.0

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-0.8

-1.3

-1.8

V

Static Drain-Source On-Resistance (Note 9)

⎯

18

25

m

Ω

30

45

Forward Transconductance (Notes 9 & 10)

⎯

16.6

⎯

S

Diode Forward Voltage (Note 9)

⎯

-0.7

-1.0

V

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

⎯

1640

⎯

pF

f = 1MHz

Output Capacitance

⎯

179

⎯

Reverse Transfer Capacitance

⎯

128

⎯

Gate Resistance

⎯

6.43

⎯

Ω

Total Gate Charge (Note 11)

⎯

14.0

⎯

nC

Total Gate Charge (Note 11)

⎯

33.7

⎯

Gate-Source Charge (Note 11)

⎯

5.5

⎯

Gate-Drain Charge (Note 11)

⎯

7.3

⎯

Turn-On Delay Time (Note 11)

⎯

6.9

⎯

ns

Turn-On Rise Time (Note 11)

⎯

14.7

⎯

Turn-Off Delay Time (Note 11)

⎯

53.7

⎯

Turn-Off Fall Time (Note 11)

⎯

30.9

⎯

Notes:

9. Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%

10. For design aid only, not subject to production testing.

11. Switching characteristics are independent of operating junction temperatures.

Typical Characteristics

0

0.5

1

1.5

2

Fig. 3 Typical Output Characteristic

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

0

5

10

15

20

25

30

01

2

3

45

Fig. 4 Typical Transfer Characteristic

-V

, GATE-SOURCE VOLTAGE (V)

GS

0

5

10

15

20

25

30

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= -5V

DS