BUL49D datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

BUL49D

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 10mA; L= 25mH

450

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 10mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

0.3

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 2A; IB= 0.4A

0.6

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= 4A; IB= 0.8A

1.2

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

1.0

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 4A; IB= 0.8A

1.3

ICES

Collector Cutoff Current

VCE= 850V; VBE= 0

VCE= 850V; VBE= 0, TC= 125℃

0.1

0.5

IEBO

Emitter Cutoff Current

VEB= 9V; IC= 0

0.1

hFE-1

DC Current Gain

IC= 10mA; VCE= 5V

hFE-2

DC Current Gain

IC= 0.5A; VCE= 5V

hFE-3

DC Current Gain

IC= 7A; VCE= 10V

Diode Forward Voltage

IC= 3A

1.5

Switching Times, Resistive Load

Storage Time

IC= 2A; VCC= 250V;

IB1= -IB2= 0.4A

μs

Fall Time

0.8

μs

Switching Times, Inductive Load

Storage Time

IC= 4A; IB1= 0.8A

VBE(off)= -5V; RBB= 0Ω

VCL= 300V; L= 1mH

1.3

μs

Fall Time

0.1

μs

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