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180RKI bảng dữ liệu(PDF) 2 Page - International Rectifier

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180RKI bảng dữ liệu(HTML) 2 Page - International Rectifier

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180/181RKI Series
2
www.irf.com
Bulletin I25153 rev. D 09/03
Voltage
V
DRM/VRRM, max. repetitive
V
RSM , maximum non-
I
DRM/IRRM max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J = TJ max.
VV
mA
40
400
500
180/181RKI
80
800
900
30
100
1000
1100
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
T(AV)
Max. average on-state current
180
A180° conduction, half sine wave
@ Case temperature
80
°C
I
T(RMS) Max. RMS on-state current
285
DC @ 79°C case temperature
I
TSM
Max. peak, one-cycle
3800
t = 10ms
No voltage
non-repetitive surge current
4000
A
t = 8.3ms
reapplied
3500
t = 10ms
100% V
RRM
3660
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
72
t = 10ms
No voltage
Initial T
J = TJ max.
66
t = 8.3ms
reapplied
61
t = 10ms
100% V
RRM
56
t = 8.3ms
reapplied
I2√t
Maximum I2√t for fusing
720
KA2√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1 Low level value of threshold
voltage
V
T(TO)
2 High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.35
V
Ipk= 570A, TJ = TJ max, tp = 10ms sine pulse
I
H
Maximum holding current
600
I
L
Typical latching current
1000
0.83
(16.7% x π x I
T(AV) < I < π x IT(AV)), TJ = TJ max.
0.92
(16.7% x π x I
T(AV) < I < π x IT(AV)), TJ = TJ max.
0.81
(I > π x I
T(AV)),TJ = TJ max.
Parameter
180/181RKI
Units Conditions
0.89
(I > π x I
T(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mAT
J = 25°C, anode supply 12V resistive load
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20Ω, tr ≤1µs
of turned-on current
T
J = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
I
TM = 50A, TJ = TJ max, di/dt = 10A/µs, VR = 100V
dv/dt = 20V/µs
Parameter
180/181RKI
Units Conditions
td
Typical delay time
1.0
Switching
tq
Typical turn-off time
100
µs
300
A/µs



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