M29F800D datasheet(30/39 Pages) STMICROELECTRONICS

tên linh kiện	M29F800D

Giải thích chi tiết về linh kiện	8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

PDF	39 Pages

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30 / 39 page

M29F800DT, M29F800DB

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Table 23. CFI Query System Interface Information

Note: 1. Not supported in the CFI

Address

Data

Description

Value

x16

1Bh

36h

0045h

VCC Logic Supply Minimum Program/Erase voltage

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

4.5V

1Ch

38h

0055h

VCC Logic Supply Maximum Program/Erase voltage

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

5.5V

1Dh

3Ah

0000h

VPP [Programming] Supply Minimum Program/Erase voltage

1Eh

3Ch

0000h

VPP [Programming] Supply Maximum Program/Erase voltage

1Fh

3Eh

0004h

Typical timeout per single byte/word program = 2n µs

16µs

20h

40h

0000h

Typical timeout for minimum size write buffer program = 2n µs

21h

42h

000Ah

Typical timeout per individual block erase = 2n ms

22h

44h

0000h

Typical timeout for full chip erase = 2n ms

see note (1)

23h

46h

0004h

Maximum timeout for byte/word program = 2n times typical

256µs

24h

48h

0000h

Maximum timeout for write buffer program = 2n times typical

25h

4Ah

0003h

Maximum timeout per individual block erase = 2n times typical

26h

4Ch

0000h

Maximum timeout for chip erase = 2n times typical

see note (1)

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