M29F800DB datasheet(15/39 Pages) STMICROELECTRONICS

15 / 39 page

15/39

M29F800DT, M29F800DB

Table 5. Commands, 8-bit mode, BYTE = VIL

Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.

All values in the table are in hexadecimal.

The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15 are Don’t

Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.

Table 6. Program, Erase Times and Program, Erase Endurance Cycles

Note: 1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.

4. Maximum value measured at worst case conditions for both temperature and VCC.

Command

Bus Write Operations

1st

2nd

3rd

4th

5th

6th

Addr

Data

Addr

Data

Addr

Data

Addr

Data

Addr

Data

Addr

Data

Read/Reset

AAA

555

Auto Select

AAA

555

AAA

Program

AAA

555

AAA

Unlock Bypass

AAA

555

AAA

Unlock Bypass

Program

Unlock Bypass Reset

Chip Erase

AAA

555

AAA

555

AAA

Block Erase

AAA

555

AAA

555

Erase Suspend

Erase Resume

Read CFI Query

Parameter

Min

Typ (1, 2)

Max(2)

Unit

Chip Erase

60(3)

Block Erase (64 Kbytes)

0.8

6(4)

Erase Suspend Latency Time

µs

Program (Byte or Word)

200(3)

µs

Chip Program (Byte by Byte)

60(3)

Chip Program (Word by Word)

30(3)

Program/Erase Cycles (per Block)

100,000

cycles

Data Retention

years

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