TPC8201 datasheet(1/7 Pages) TOSHIBA

tên linh kiện	TPC8201

Giải thích chi tiết về linh kiện	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

PDF	7 Pages

Scroll/Zoom	100%

nhà sản xuất	TOSHIBA [Toshiba Semiconductor]

Trang chủ	http://www.semicon.toshiba.co.jp/eng

Logo

1 / 7 page

TPC8201

2003-02-20

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)

TPC8201

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PCs

l Low drain−source ON resistance

: RDS (ON) = 37 mΩ (typ.)

l High forward transfer admittance : |Yfs| = 6 S (typ.)

l Low leakage current

: IDSS = 10 µA (max) (VDS = 30 V)

l Enhancement−mode

: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

30

V

Drain-gate voltage (RGS = 20kΩ)

VDGR

30

V

Gate-source voltage

VGSS

±20

V

D C

(Note 1)

ID

5

Drain curren

Pulse

(Note 1)

IDP

20

A

Single-device

operation

(Note 3a)

PD (1)

1.5

Drain power

dissipation

(t = 10s)

(Note 2a)

Single-device value

at dual operation

(Note 3b)

PD(2)

1.1

W

Single-device

operation

(Note 3a)

PD (1)

0.75

Drain power

dissipation

(t = 10s)

(Note 2b)

Single-device value

at dual operation

(Note 3b)

PD (2)

0.45

W

Single pulse avalanche energy

(Note 4)

EAS

32.5

mJ

Avalanche current

IAR

5

A

Repetitive avalanche energy

Single-device value at operation

(Note 2a, 3b, 5)

EAR

0.1

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1E

Weight: 0.08 g (typ.)

Circuit Configuration

Số phần tương tự - TPC8201

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Toshiba Semiconductor	TPC8202	339Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
	TPC8203	419Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
	TPC8204	342Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
VBsemi Electronics Co.,...	TPC8205	1Mb / 9P	Dual N-Channel 60 V (D-S) 175 째C MOSFET
Toshiba Semiconductor	TPC8206	223Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

More results

Mô tả tương tự - TPC8201

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Toshiba Semiconductor	HN1K04FU	124Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
	SSM3K17FU	234Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
	SSM6N04FU	175Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
	SSM3K116TU	166Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
	SSM6K202FE	194Kb / 5P	TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
	TK8A60DA	266Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
	K15A50D	256Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOS)
	SSM3K35CT	215Kb / 5P	TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
	SSM3K44FS	171Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
	SSM3K44MFV	204Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

More results

TPC8201 bảng dữ liệu(PDF) 1 Page - Toshiba Semiconductor

TPC8201 bảng dữ liệu(HTML) 1 Page - Toshiba Semiconductor

Số phần tương tự - TPC8201

Mô tả tương tự - TPC8201

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL