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DMN4010LFG bảng dữ liệu(PDF) 2 Page - Diodes Incorporated |
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DMN4010LFG bảng dữ liệu(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() POWERDI is a registered trademark of Diodes Incorporated DMN4010LFG Document number: DS36764 Rev. 2 - 2 2 of 7 www.diodes.com March 2015 © Diodes Incorporated DMN4010LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 11.5 9.2 A t<10s TA = +25°C TA = +70°C ID 14.2 11.4 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 80 A Maximum Continuous Body Diode Forward Current (Note 6) IS 2 A Avalanche Current (Note 7) L = 0.1mH IAS 27 A Avalanche Energy (Note 7) L = 0.1mH EAS 37 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 0.93 W Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 137 °C/W t<10s 89 Total Power Dissipation (Note 6) PD 2.45 W Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 52 °C/W t<10s 34 Thermal Resistance, Junction to Case (Note 6) RθJC 3 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. |
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