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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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COP8CSDR9KMT7 bảng dữ liệu(PDF) 13 Page - National Semiconductor (TI) |
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COP8CSDR9KMT7 bảng dữ liệu(HTML) 13 Page - National Semiconductor (TI) |
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13 / 80 page  8.0 Electrical Characteristics (Continued) DC Electrical Characteristics (−40˚C ≤ T A ≤ +85˚C) (Continued) Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis. Parameter Conditions Min Typ Max Units Output Current Levels D Outputs Source V CC = 4.5V, VOH = 3.8V −7 mA V CC = 2.7V, VOH = 1.8V −4 mA Sink (Note 7) V CC = 4.5V, VOL = 1.0V 10 mA V CC = 2.7V, VOL = 0.4V 3.5 mA All Others Source (Weak Pull-Up Mode) V CC = 4.5V, VOH = 3.8V −10 µA V CC = 2.7V, VOH = 1.8V −5 µA Source (Push-Pull Mode) V CC = 4.5V, VOH = 3.8V −7 mA V CC = 2.7V, VOH = 1.8V −4 mA Sink (Push-Pull Mode) (Note 7) V CC = 4.5V, VOL = 1.0V 10 mA V CC = 2.7V, VOL = 0.4V 3.5 mA TRI-STATE Leakage V CC = 5.5V −0.5 +0.5 µA Allowable Sink Current per Pin 15 mA Maximum Input Current without Latchup (Note 5) ±200 mA RAM Retention Voltage, V R (in HALT Mode) 2.0 V Input Capacitance 7pF Load Capacitance on D2 1000 pF Voltage on G6 to Force Execution from Boot ROM (Note 8) G6 rise time must be slower than 100 nS 2xV CC V CC +7 V G6 Rise Time to Force Execution from Boot ROM 100 nS Input Current on G6 when Input > V CC V IN = 11V, VCC = 5.5V 500 µA Flash Memory Data Retention 25˚C 100 yrs Flash Memory Number of Erase/Write Cycles See Table 13, Typical Flash Memory Endurance 10 5 cycles AC Electrical Characteristics (−40˚C ≤ T A ≤ +85˚C) Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis. Parameter Conditions Min Typ Max Units Instruction Cycle Time (t C) Crystal/Resonator 4.5V ≤ V CC ≤ 5.5V 0.5 DC µs 2.7V ≤ V CC < 4.5V 1.5 DC µs Flash Memory Page Erase Time See Table 13, Typical Flash Memory Endurance 1ms Flash Memory Mass Erase Time 8 ms Frequency of MICROWIRE/PLUS in Slave Mode 2 MHz MICROWIRE/PLUS Setup Time (t UWS)20 ns MICROWIRE/PLUS Hold Time (t UWH)20 ns MICROWIRE/PLUS Output Propagation Delay (t UPD) 150 ns Input Pulse Width Interrupt Input High Time 1 t C Interrupt Input Low Time 1 t C www.national.com 13 |
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