ACE4940M datasheet(1/7 Pages) ACE

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Giải thích chi tiết về linh kiện	Dual N-Channel 40-V MOSFET

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ACE4940M

Dual N-Channel 40-V MOSFET

VER 1.2

1

Description

The ACE4940M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM applications. The source leads are separated to

allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Features

• Low r

DS(on) trench technology

• Low thermal impedance

• Fast switching speed

Applications

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

Absolute Maximum Ratings

Parameter

Symbol

Limit

Units

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

±20

V

Continuous

Drain Current

a

TA=25℃

ID

8.3

A

TA=70℃

6.8

Pulsed Drain Current

b

IDM

50

A

Continuous Source Current (Diode Conduction)

a

IS

3

A

Power Dissipation

a

TA=25℃

PD

2.1

W

TA=70℃

1.3

Operating temperature / storage temperature

TJ/TSTG -55~150

℃

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

a

t <= 10 sec

RθJA

62.5

°C/W

Steady State

110

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Số phần tương tự - ACE4940M

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More results

Mô tả tương tự - ACE4940M

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