RMB2S, RMB4S

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Vishay General Semiconductor

Revision: 19-Aug-13

3

Document Number: 88705

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.3

0.5

0.7

0.9

1.1

1.3

1.5

0.01

0.1

1

10

Instantaneous Forward Voltage (V)

Pulse Width = 300 µs

1 % Duty Cycle

T

T

0

20

40

60

80

100

0.01

0.1

10

100

T

T

Percent of Rated Peak Reverse Voltage (%)

1

0.1

1

10

100

0

5

10

15

20

25

30

1000

Reverse Voltage (V)

T

f = 1.0 MHz

V

p-p

0.029 (0.74)

0.017 (0.43)

0 to 8°

0.049 (1.24)

0.039 (0.99)

0.062 (1.57)

0.058 (1.47)

0.016 (0.41)

0.006 (0.15)

0.018 (0.46)

0.014 (0.36)

0.008 (0.20)

0.004 (0.10)

0.114 (2.90)

0.110 (2.80)

0.058 (1.47)

0.054 (1.37)

0.252 (6.40)

0.272 (6.90)

0.106 (2.70)

0.090 (2.30)

0.0075 (0.19)

0.0065 (0.16)

0.105 (2.67)

0.095 (2.41)

0.195 (4.95)

0.179 (4.55)

0.144 (3.65)

0.161 (4.10)

0.205 (5.21)

0.195 (4.95)

0.114 (2.90)

0.094 (2.40)

0.038 (0.96)

0.019 (0.48)

0.272 MAX.

(6.91 MAX.)

0.030 MIN.

(0.76 MIN.)

0.023 MIN.

(0.58 MIN.)

0.105 (2.67)

0.095 (2.41)

TO-269AA (MBS)

Mounting Pad Layout