G2SB20, G2SB60, G2SB80

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Vishay General Semiconductor

Revision: 16-Aug-13

3

Document Number: 88603

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance



PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

1

10

100

0.1

10

1

100

Reverse Voltage (V)

0.01

0.1

1

10

100

0.01

0.1

10

1

100

t - Heating Time (s)

Case Type GBL

0.125 (3.17) x 45°

Chamfer

0.825 (20.9)

0.815 (20.7)

0.421 (10.7)

0.411 (10.4)

0.718 (18.2)

0.682 (17.3)

0.098 (2.5)

0.075 (1.9)

Lead Depth

0.022 (0.56)

0.018 (0.46)

0.210 (5.3)

0.190 (4.8)

0.040 (1.02)

0.030 (0.76)

0.140 (3.56)

0.128 (3.25)

0.022 (0.56)

0.018 (0.46)

0.050 (1.27)

0.040 (1.02)

0.098 (2.5)

0.075 (1.9)

0.095 (2.41)

0.080 (2.03)

0.080 (2.03)

0.060 (1.50)

Polarity shown on front side of case, positive lead beveled corner