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CLC5802IM bảng dữ liệu(PDF) 10 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
tên linh kiện CLC5802IM
Giải thích chi tiết về linh kiện  Dual Low-Noise, Voltage Feedback Op Amp
PDF  12 Pages
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nhà sản xuất  NSC [National Semiconductor (TI)]
Trang chủ  http://www.national.com
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CLC5802IM bảng dữ liệu(HTML) 10 Page - National Semiconductor (TI)

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Application Information (Continued)
A resistive divider made from the 143
Ω and 60.4Ω resistors
was chosen to reduce the loop-gain and stabilize the net-
work. The CLC5802 composite integrator provides integra-
tion over five decades of operation. R and C set the integra-
tor’s gain.
Figure 4 shows the frequency and phase
response of the circuit in
Figure 3 with R = 44.2
Ω and C =
360pF.
K: R2/(R1 + R2)
A
0: Op amp low Frequency open loop gain
Positive Peak Detector
The CLC5802’s dual amplifiers can be used to implement a
unity-gain peak detector circuit as shown in
Figure 5.
The acquisition speed of this circuit is limited by the dynamic
resistance of the diode when charging C
hold. A plot of the cir-
cuit’s performance is shown in
Figure 6 with a 1MHz sinusoi-
dal input.
A current source, built around Q1, provides the necessary
bias current for the second amplifier and prevents saturation
when power is applied. The resistor, R, closes the loop while
diode D
2 prevents negative saturation when VIN is less than
V
C. A MOS-type switch (not shown) can be used to reset the
capacitor’s voltage.
The maximum speed of detection is limited by the delay of
the op amp and the diodes. The use of Schottky diodes will
provide faster response.
Adjustable or Bandpass Equalizer
A “boost” equalizer can be made with the CLC5802 by sum-
ming a bandpass response with the input signal, as shown in
Figure 7.
The overall transfer function is shown in
Equation (3).
(3)
To build a boost circuit, use the design Equation 4 and 5.
(4)
(5)
Select R
2 and C using Equation (4). Use reasonable values
for high frequency circuits - R
2 between 10Ω and 5kΩ, C be-
tween 10pF and 2000pF. Use
Equation (5) to determine the
parallel combination of R
a and Rb. Select Ra and Rb by ei-
ther the 10
Ω to 5kΩ criteria or by other requirements based
on the impedance V
IN is capable of driving. Finish the design
by determining the value of K from
Equation (6).
DS101341-29
FIGURE 4.
DS101341-30
FIGURE 5.
DS101341-31
FIGURE 6.
DS101341-32
FIGURE 7.
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