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NOIP1SN016KA bảng dữ liệu(PDF) 4 Page - ON Semiconductor

tên linh kiện NOIP1SN016KA
Giải thích chi tiết về linh kiện  PYTHON 25K/16K/12K/10K Global Shutter CMOS Image Sensors
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Table 3. RECOMMENDED OPERATING RATINGS (Note 3)
Symbol
Description
Min
Max
Units
TJ
Operating temperature range
−40
+85
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 4. ABSOLUTE MAXIMUM RATINGS (Note 4)
Symbol
Parameter
Min
Max
Units
ABS (1.0 V supply)
ABS rating for 1.0 V supply
–0.5
1.2
V
ABS (1.8 V supply group)
ABS rating for 1.8 V supply group
–0.5
2.2
V
ABS (3.3 V supply group)
ABS rating for 3.3 V supply group
–0.5
4.3
V
ABS (4.2 V supply)
ABS rating for 4.2 V supply
–0.5
4.6
V
ABS (4.5 V supply)
ABS rating for 4.5 V supply
–0.5
5.0
V
TS (Notes 4 and 5)
ABS storage temperature range
0
150
°C
ABS storage humidity range at 85
°C
85
%RH
Electrostatic discharge (ESD)
(Notes 3 and 4)
Human Body Model (HBM): JS−001−2010
2000
V
Charged Device Model (CDM): JESD22−C101
500
LU
Latch-up: JESD−78
140
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
3. Operating ratings are conditions in which operation of the device is intended to be functional.
4. ON Semiconductor recommends that customers become familiar with, and follow the procedures in JEDEC Standard JESD625−A. Refer
to Application Note AN52561. Long term exposure toward the maximum storage temperature will accelerate color filter degradation.
5. Caution needs to be taken to avoid dried stains on the underside of the glass due to condensation. The glass lid glue is permeable and can
absorb moisture if the sensor is placed in a high % RH environment.
Table 5. ELECTRICAL SPECIFICATIONS
Boldface Limits apply for TJ = TMIN to TMAX, all other limits TJ = +30°C (Notes 6, 7, 8 and 9)
Parameter
Description
Min
Typ
Max
Units
Power Supply Parameters
vdda_33
Analog supply - 3.3 V domain. gnda_33 is connected to substrate
3.2
3.3
3.4
V
Idda_33
Current consumption from analog supply
910
mA
vddd_33
Digital supply - 3.3 V domain. gndd_33 is connected to substrate
3.2
3.3
3.4
V
Iddd_33
Current consumption from 3.3 V digital supply
90
mA
vdd_18
Digital supply - 1.8 V domain. gndd_18 is connected to substrate
1.7
1.8
1.9
V
Idd_18
Current consumption 1.8 V digital supply
540
mA
vdd_pix
Pixel array supply
3.25
3.3
3.35
V
Idd_pix
Current consumption from pixel supply
115
mA
vdd_resfd
Floating diffusion reset supply
4.2
V
gnd_resfd
Floating diffusion reset ground. Not connected to substrate
Note This is a sinking power supply with 200 mA range.
0
V
vdd_trans
Pixel transfer supply
3.3
V
gnd_trans
Pixel transfer ground. Not connected to substrate.
Note This is a sinking power supply with 200 mA range.
0
V
6. All parameters are characterized for DC conditions after thermal equilibrium is established.
7. This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is recommended
that normal precautions be taken to avoid application of any voltages higher than the maximum rated voltages to this high−impedance
circuit.
8. Minimum and maximum limits are guaranteed through test and design.
9. Vref_colmux supply should be able to source and sink current



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