IRLML2502 datasheet(1/9 Pages) IRF

tên linh kiện	IRLML2502

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Parameter

Typ.

Max.

Units

RθJA

Maximum Junction-to-Ambient

75

100

°C/W

IRLML2502

HEXFET® Power MOSFET

These N-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely

low on-resistance per silicon area. This benefit, combined

with the fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable device

for use in battery and load management.

A thermally enhanced large pad leadframe has been

incorporated into the standard SOT-23 package to produce

a HEXFET Power MOSFET with the industry's smallest

footprint. This package, dubbed the Micro3

, is ideal for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro3 allows it

to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards. The thermal

resistance and power dissipation are the best available.

Thermal Resistance

VDSS = 20V

RDS(on) = 0.045Ω

l Ultra Low On-Resistance

l N-Channel MOSFET

l SOT-23 Footprint

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

Description

04/30/03

www.irf.com

1

Parameter

Max.

Units

VDS

Drain- Source Voltage

20

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ 4.5V

4.2

ID @ TA= 70°C

Continuous Drain Current, VGS @ 4.5V

3.4

A

IDM

Pulsed Drain Current

33

PD @TA = 25°C

Power Dissipation

1.25

PD @TA = 70°C

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

VGS

Gate-to-Source Voltage

± 12

V

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

W

Micro3



D

S

G

3

1

2

PD - 93757C

Số phần tương tự - IRLML2502

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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