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HT83C51DC bảng dữ liệu(PDF) 6 Page - Honeywell Solid State Electronics Center |
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HT83C51DC bảng dữ liệu(HTML) 6 Page - Honeywell Solid State Electronics Center |
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6 / 12 page ![]() 6 HT83C51 DC CHARACTERISTICS Input Voltage, VDD to VSS ......................... -0.5 V to 7.0 V Voltage On Any Pin to VSS ............... -0.5 V to VDD+0.3 V Power Dissipation ............................................. 750 mW Storage Temperature ............................... -65 to +325 °C Lead Temperature (attachment, 10 sec) .............. 355 °C IOL per Output Pin ............................................... 15 mA ABSOLUTE MAXIMUM RATINGS (1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not implied. Frequent or extended exposure to absolute maximum conditions may effect device reliability. (1) Under steady state (non-transient conditions, IOL must be limited externally as follows: maximum IOL per port pin 10mA maximum IOL per 8-bit port – port 0 26 mA – port 1,2,3 15 mA maximum total IOL for all output pins 71 mA (2) If IOL exceeds the test conditions, VOL may exceed the related specifications. (3) Pins are not guaranteed to sink current greater than the listed test conditions. l o b m y Sr e t e m a r a Pn i Mx a Mt i n U) 3 ( s n o i t i d n o C t s e T L I Ve g a t l o V w o L t u p n I3 . 0 - S S V8 . 0 H I V) T S R , 1 L A T X t p e c x e ( e g a t l o V h g i H t u p n I0 . 25 . 0 + D D VV 1 H I V) T S R , 1 L A T X ( e g a t l o V h g i H t u p n I5 8 . 35 . 0 + D D VV L O V) 2 , 1 ( e g a t l o V w o L t u p t u O ) 3 d n a , 2 , 1 s t r o P ( 3 . 0V A µ 0 0 1 = L O I 5 4 . 0V A m 6 . 1 = L O I 0 . 1V A m 5 . 3 = L O I 1 L O Ve g a t l o V w o L t u p t u O) 2 , 1 ( ) n N E S P , E L A , 0 t r o P ( 3 . 0V A µ 0 0 2 = L O I 5 4 . 0V A m 2 . 3 = L O I 0 . 1V A m 0 . 7 = L O I H O Ve g a t l o V h g i H t u p t u O ) n N E S P , E L A , 3 , 2 , 1 t r o P ( 2 . 4V A µ 0 1 - = H O I 8 . 3V A µ 0 3 - = H O I 0 . 3V A µ 0 6 - = H O I 1 H O V) 0 t r o P ( e g a t l o V h g i H t u p t u O 2 . 4V A µ 0 0 2 - = H O I 8 . 3V A m 2 . 3 - = H O I 0 . 3V A m 0 . 7 - = H O I L I I) 3 d n a , 2 , 1 s t r o P ( t n e r r u C t u p n I 0 l a c i g o L0 5 -A µV 5 4 . 0 = N I V I L I) 0 t r o P ( t n e r r u C e g a k a e L t u p n I0 1 ±A µD D V < n i V < V 5 4 . 0 L T I) 3 d n a , 2 , 1 s t r o P ( t n e r r u C n o i t i s n a r T 0 o t 1 l a c i g o L0 5 6 -A µV 2 = N I V T S R Rr o t s i s e R n w o d ll u P T S R0 15 2 2W K O I Ce c n a t i c a p a C n i P l a c i p y t 0 1F pC ° 5 2 , z H M 1 @ D D I g n i t a r e p O t n e r r u C y l p p u S r e w o P e l d I 0 7 5 1 A m A m z H M 6 1 z H M 6 1 |
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