2004 Jan 26

2

Philips Semiconductors

Product specification

Schottky barrier diode

BAT760

FEATURES

• Ultra high-speed switching

• Very low forward voltage

• Guard ring protected

• Very small SMD plastic package.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits.

DESCRIPTION

Planar Schottky barrier diode with an integrated guard ring

for stress protection in a SOD323 (SC-76) very small SMD

plastic package.

PINNING

PIN

DESCRIPTION

1

cathode

2

anode

k, 4 columns

12

MGU328

Fig.1

Simplified outline (SOD323; SC-76) and

symbol.

Marking code: A4.

The marking bar indicates the cathode.

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

TYPE

NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

BAT760

−

plastic surface mounted package; 2 leads

SOD323

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

20

V

continuous forward current

−

1A

non-repetitive peak forward current

t = 8.3 ms half sinewave;

JEDEC method

−

5A

storage temperature

−65

+150

°C

junction temperature

−

125

°C

operating ambient temperature

−65

+125

°C