Io = 100mA

0.087(2.20)

0.079(2.00)

0.016(0.40) Typ

0.055(1.40)

0.047(1.20)

0.043 (1.10)

0.035(0.90)

0.008(R0.2) Typ.

Dimensions in inches and (millimeter)

0805(2012)

CDBS001A

Features

Designed for mounting on small surface

Extremely thin package

Low stored charge

Majority carrier conduction

Mechanical data

Case: 0805(2012) Standard package,

molded plastic

Terminals: Solder plated, solderable per

MIL-STD-750, method 2026

Polarity: Indicated by cathode band

Mounting position: Any

Weight: 0.0048 gram (approximately)

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode

www.comchip.com.tw

COMCHIP

COMCHIP

Page 1

Page 1

Parameter

Repetitive peak reverse voltage

Average forward current

Forward current , surge peak

Capacitance between terminals

Power Dissipation

Storage temperature

Junction temperature

Conditions

Symbol

T j

Min

-40

-40

Max

30

100

6

300

+125

+125

Unit

V

V

V

V

V

uA

Typ

1000

Parameter

Forward voltage 1

Forward voltage 2

Forward voltage 3

Forward voltage 4

Forward voltage 5

Reverse current

Conditions

IF = 0.1 mA DC

IF = 1 mA D C

IF = 10 m A DC

IF = 30 m A DC

IF = 100 mA DC

Symbol

Min Typ Max

0.24

0.32

0.40

0.50

1.00

2

Unit

C

C

8.3 ms single half sine-wave superimposed

on rate load ( JEDEC method )

V

mA

mA

pF

mW

Symbol

T j

Electrical Characteristics ( at TA = 25 C unless otherwise noted )

RDS0208017-C