HSC106D datasheet(1/4 Pages) SEMIHOW

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◎ SEMIHOW REV.A0, December 2014

 Repetitive Peak Off-State Voltage (V

DRM=400V/600V)

 R.M.S On-State Current (I

T(RMS)=4.0A)

 Average On-State Current (I

T(AV)=2.55A)

HSC106D/M

Silicon Controlled Rectifier

Dec 2014

General Description

Glassivated PNPN devices designed for high volume consumer

applications such as temperature, light and speed control, process

and remote control, and warning systems where reliability of

operation is important.

Absolute Maximum Ratings (Ta=25℃)

Symbol

Parameter

Value

Units

VDRM

Repetitive Peak Off-State Voltage (Forward)

HSC106D

HSC106M

400

600

V

VRRM

Repetitive Peak Off-State Voltage (Reverse)

HSC106D

HSC106M

400

600

V

IT(RMS)

R.M.S On-State Current (All conduction angles)

4.0

A

IT(AV)

Average On-State Current

2.55

A

ITSM

Surge On-State Current

(1/2 Cycle, 60Hz, Sine Wave, Non Repetitive, Tj=110℃)

20

A

PGM

Forward Peak Gate Power Dissipation

(Pulse Width

≤1.0μsec, Tc=80℃)

0.5

W

PG(AV)

Forward Average Gate Power Dissipation

(Pulse Width

≤1.0μsec, Tc=80℃)

0.1

W

VRGM

Reverse Peak Gate Voltage

6.0

V

IFGM

Forward Peak Gate Current

(Pulse Width

≤1.0μsec, Tc=80℃)

0.2

A

TSTG

Storage Temperature Range

-40 to +150

℃

Tj

Operating Junction Temperature

-40 to +110

℃

FEATURES

1. K

2. A

3. G

V

DRM =

400V / 600 V

I

T(RMS) = 4.0A

1.Cathode

Symbol

2.Anode

3.Gate

HSC106D/M

2

1

3

TO-126

Số phần tương tự - HSC106D

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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Mô tả tương tự - HSC106D

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