BUJ302A datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

BUJ302A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA; IB= 0, L= 25mH

500

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

1.1

ICES

Collector Cutoff Current

VCE=RatedVCES ;VBE= 0

VCE=RatedVCES ;VBE= 0;TC=125℃

0.2

1.5

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 10mA ; VCE= 5V

hFE-2

DC Current Gain

IC= 0.1A ; VCE= 5V

Switching Times ;Resistive Load

ton

Turn-on Time

IC= 1.0A; IB1= -IB2= 0.2A;

RL= 75Ω; VBB2= 4V

1.0

μs

Storage Time

4.0

μs

Fall Time

0.8

μs

Switching Times ;Resistive Load

Storage Time

IC= 1.0A; IB1= -IB2= 0.2A;

LB=1uH; -VBB= 5V

1.4

μs

Fall Time

145

160

Switching Times ;Resistive Load

Storage Time

IC= 1.0A; IB1= -IB2= 0.2A;

LB=1uH; -VBB= 5V ；Tj=100℃

1.5

μs

Fall Time

200

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